Q62702-B607 データシートの表示（PDF） - Infineon Technologies

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Q62702-B607

Silicon Variable Capacitance Diode

Infineon Technologies 

BB 515

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Reverse current

IR

VR = 30 V

VR = 30 V, TA = 85 ˚C

Diode capacitance, f = 1 MHz

CT

VR = 1 V

VR = 28 V

Capacitance ratio

CT1

VR = 1 V, 28 V; f = 1 MHz

CT28

Capacitance matching

∆CT

VR = 1 V … 28 V; f = 1 MHz

CT

Series resistance

rs

CT = 9 pF, f = 470 MHz

Series inductance

Ls

Diode capacitance CT = f (VR)

f = 1 MHz

min.

–

–

17.5

1.9

8.2

–

–

–

Values

Unit

typ.

max.

nA

–

10

–

200

pF

18.7

20

2.1

2.3

8.9

9.8

–

–

2.5

%

0.5

–

Ω

2

–

nH

Semiconductor Group

2

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