MJD350(1997) データシートの表示（PDF） - STMicroelectronics
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MJD350 Datasheet PDF : 5 Pages
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MJD340 / MJD350
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Rthj- amb Thermal Resistance Junction-ambient
Max
Max
8.33
100
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off
Current (vbE = 0)
VCB = 300 V
IEBO
Emitt er Cut-off Current VEB = 3 V
(IC = 0)
VCEO(sus) Collect or-Emitter
Sustaining Voltage
IC = 1 mA
hFE∗ DC Current G ain
IC = 50 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
For PNP type voltage and current values are negative.
VCE = 10 V
Min. Typ.
300
30
M a x.
0.1
0.1
240
Unit
mA
mA
V
Safe Operating Area
Derating Curve
2/5
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