RB521S-30 データシートの表示（PDF） - MAKO SEMICONDUCTOR CO.,LIMITED
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RB521S-30 Datasheet PDF : 2 Pages
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HIGH SPEED SWITCHING DIODE
RB521S-30
FEATURES
Small surface mounting type
Low reverse current and low forward voltage
High reliability y
+
-
MARKING: C
MAKO Semiconductor Co., Limited 4008-378-873
http://www.makosemSiO.hDk-/523
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25
Parameter
Symbol
Limits
Unit
DC reverse voltage
VR
30
V
Mean rectifying current
IO
200
mA
Peak forward surge current
IFSM
1
A
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-40-125
℃
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VF
0.5
V
Reverse current
IR
30 μA
Conditions
IF=200mA
VR=10V
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Page:P2-P1
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