IXXR110N65B4H1 データシートの表示（PDF） - IXYS CORPORATION
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IXXR110N65B4H1 Datasheet PDF : 7 Pages
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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
IC = 60A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 110A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 55A, VGE = 15V
VCE = 400V, RG = 2Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 150°C
IC = 55A, VGE = 15V
VCE = 400V, RG = 2Ω
Note 2
RthJC
RthCS
Characteristic Values
Min.
Typ. Max.
24
40
S
3650
pF
440
pF
143
pF
183
nC
32
nC
83
nC
38
ns
46
ns
2.20
mJ
156
ns
85
ns
1.05
1.90 mJ
34
ns
46
ns
3.15
mJ
160
ns
105
ns
1.40
mJ
0.33 °C/W
0.15
°C/W
IXXR110N65B4H1
ISOPLUS247 (IXXR) Outline
1 - Gate
2 - Collector
3 - Emitter
Reverse Sonic Diode (FRD)
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ. Max.
VF
I
F
=
100A,
VGE
=
0V,
Note
1
TJ = 150°C
1.7
2.3 V
1.8
V
IRM
IF = 100A, VGE = 0V,
TJ = 150°C
95
A
trr
-diF/dt = 1500A/μs, VR = 300V
100
ns
RthJC
0.70 °C/W
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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