NCP623DM-3.3R2 データシートの表示（PDF） - ON Semiconductor

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NCP623DM-3.3R2

Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control

ON Semiconductor 

NCP623

1 ms

NCP623 Without

Wake−up Improvement

(Typical Response)

30 ms

NCP623 With

Wake−up Improvement

(Typical Response)

Figure 6. NCP623 Wake−up Improvement with Small PNP Transistor

The PNP being wired upon the bypass pin, it shall not

degrade the noise response of the NCP623. Figure 7

confirms the good behavior of the integrated circuit in this

area which reaches a typical noise level of 26 mVRMS

(100 Hz to 100 kHz) at Iout = 60 mA.

350

300

250

200

Cbyp = 10 nF

150

Vin = 3.8 V

Vout = 2.8 V

Co = 1.0 mF

Iout = 60 mA

Tamb = 25°C

100

50 Output Noise = 26 mVrms C =

10 nF @ 100 Hz − 100 kHz

0

100

1,000

10,000

100,000 1,000,000

Frequency (Hz)

Figure 7. Noise Density of the NCP623 with a 10 nF

Bypass Capacitor and a Wake−up Improvement Network

http://onsemi.com

7

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