BTS133 データシートの表示（PDF） - Infineon Technologies

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BTS133

Smart Lowside Power Switch

Infineon Technologies 

HITFET=BTS 133

Smart Lowside Power Switch

Features

• Logic Level Input

• Input Protection (ESD)

•=Thermal shutdown with latch

• Overload protection

• Short circuit protection

• Overvoltage protection

• Current limitation

• Status feedback with external input resistor

• Analog driving possible

Product Summary

Drain source voltage

On-state resistance

Current limit

Nominal load current

Clamping energy

VDS

RDS(on)

I D(lim)

I D(ISO)

EAS

60 V

50 mΩ

21 A

7A

2000 mJ

Application

• All kinds of resistive, inductive and capacitive loads in switching or

linear applications

• µC compatible power switch for 12 V and 24 V DC applications

• Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET in Smart SIPMOS chip on chip tech-

nology. Fully protected by embedded protected functions.

Vbb

+

LOAD

1

IN

dv/dt

lim itation

C u rre n t

lim itation

O v e rv o lta g e

protection

D ra in

2

ESD

O v e rlo a d

protection

O ve r-

tem perature

protection

SS hhoorrtt cciirrccuuiitt

pprrootteeccttiioonn

Source

3

H IT F E T

Page 1

M

19.05.2000

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