BTS133 データシートの表示（PDF） - Infineon Technologies

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BTS133

Smart Lowside Power Switch

Infineon Technologies 

Electrical Characteristics

Parameter

at Tj=25°C, unless otherwise specified

Characteristics

Initial peak short circuit current limit

VIN = 10 V, VDS = 12 V

Current limit 1)

VIN = 10 V, VDS = 12 V, tm = 350 µs,

Tj = -40...+150 °C

Dynamic Characteristics

Turn-on time VIN to 90% ID:

RL = 2,2 Ω, VIN = 0 to 10 V, Vbb = 12 V

Turn-off time VIN to 10% ID:

RL = 2,2 Ω, VIN = 10 to 0 V, Vbb = 12 V

Slew rate on

70 to 50% Vbb:

RL = 2,2 Ω, VIN = 0 to 10 V, Vbb = 12 V

Slew rate off

50 to 70% Vbb:

RL = 2,2 Ω, VIN = 10 to 0 V, Vbb = 12 V

Protection Functions

Thermal overload trip temperature

Unclamped single pulse inductive energy

ID = 7 A, Tj = 25 °C, Vbb = 32 V

ID = 7 A, Tj = 150 °C, Vbb = 32 V

Inverse Diode

Inverse diode forward voltage

IF = 5*7A, tm = 300 µS, VIN = 0 V

BTS 133

Symbol

Values

Unit

min. typ. max.

ID(SCp)

-

65

-A

ID(lim)

21 28 40

ton

--

toff

--

-dVDS/dton --

dVDS/dtoff

--

40 100 µs

70 170

1

3 V/µs

1

3

Tjt

150 165

- °C

EAS

mJ

2000 -

-

450

-

-

VSD

- 1.08 - V

1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition

and a short circuit occurs, these values might be exceeded for max. 50 µs.

Page 4

19.05.2000

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