2SB1188 データシートの表示（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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2SB1188

SOT-89-3L Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

2SB1188 TRANSISTOR (PNP)

FEATURES

z

Low VCE(sat).

z Complements the 2SD1766

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

VCEO

VEBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-40

V

-32

V

-5

V

SOT-89-3L

1. BASE

2. COLLECTOR 1

2

3. EMITTER

3

IC

PC

RθJA

TJ

Tstg

Collector Current -Continuous

Collector Power Dissipation

Thermal Resistance From

Junction To Ambient

Junction Temperature

Storage Temperature

-2

500

250

150

-55~150

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min Typ Max Unit

Collector-base breakdown voltage

V(BR)CBO IC=-50μA , IE=0

-40

V

Collector-emitter breakdown voltage

V(BR)CEO IC= -1mA , IB=0

-32

V

Emitter-base breakdown voltage

Collector cut-off current

V(BR)EBO IE=-50μA, IC=0

ICBO

VCB=-20 V , IE=0

-5

V

-1

μA

Emitter cut-off current

IEBO

VEB=-4 V , IC=0

-1

μA

DC current gain *

hFE

VCE=-3V, IC= -0.5A

82

390

Collector-emitter saturation voltage *

Transition frequency

Output capacitance

* Measured using pulse current.

CLASSIFICATION OF hFE

Rank

Range

Marking

P

82-180

BCP

VCE(sat)

fT

Cob

IC=-2A, IB= -0.2A

VCE=-5V, IC=-0.5A ,f=30MHz

VCB=-10V, IE=0 ,f=1MHz

Q

120-270

BCQ

-0.8

V

100

MHz

50

pF

R

180-390

BCR

www.cj-elec.com

1

D,Jul,2015

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