ZVP0120A データシートの表示（PDF） - Diodes Incorporated.

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ZVP0120A

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Diodes Incorporated. 

ZVP0120A

TYPICAL CHARACTERISTICS

-0.7

VGS=

-10V

-0.6

-8V

-7V

-0.5

-6V

-0.4

-0.3

-5V

-0.2

-4.5V

-0.1

-4V

0

-3.5V

0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100

VDS - Drain Source Voltage (Volts)

Output Characteristics

-0.4

VGS=

-10V

-8V

-7V

-0.3

-6V

-5V

-0.2

-4.5V

-0.1

-4V

-3.5V

0

0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10

VDS - Drain Source Voltage (Volts)

Saturation Characteristics

-20

-18

-16

-14

-12

-10

-8

ID=

-6

-300mA

-4

-200mA

-2

-100mA

0

-50mA

0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10

VGS-Gate Source Voltage (Volts)

Voltage Saturation Characteristics

-0.7

VDS=

-25V

-0.6

-0.5

-0.4

-10V

-0.3

-0.2

-0.1

0

0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10

VGS-Gate Source Voltage (Volts)

Transfer Characteristics

100

50

10

-1

ID=

-300mA

-200mA

-I00mA

-50mA

-2 -3 -4 -5 -6 -7 -8 -9-10

-20

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

Drain-Source Resistance RDS(on)

VGS=-10V

ID=-0.1A

1.0

VGS=VDS

0.8

Gate

Threshold

Voltage

ID=-1mA

VGS(th)

0.6

-40 -20 0 20 40 60 80 100 120 140 160 180

VGS-Gate Source Voltage (Volts)

On-resistance vs gate-source voltage

Temperature (°C)

Normalised RDS(on) and VGS(th) vs Temperature

3-407

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