ZVP2110A データシートの表示（PDF） - Diodes Incorporated.

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ZVP2110A

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Diodes Incorporated. 

ZVP2110A

TYPICAL CHARACTERISTICS

-1.6

VGS=

-20V

-1.4

-16V

-12V

-1.2

-10V

-9V

-1.0

-8V

-0.8

-7V

-0.6

-6V

-0.4

-0.2

0

-5V

--44.5VV

-4V

-3.5V

0

-10

-20

-30

-40

-50

-1.6

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0

0

-2

-4

-6

-8

VDS - Drain Source Voltage (Volts)

Output Characteristics

VDS - Drain Source Voltage (Volts)

Saturation Characteristics

VGS=

-20V

-16V

-12V

-10V

-9V

-8V

-7V

-6V

-5V

-4.5V

-4V

-3.5V

-10

-8

-6

-4

ID=

-2

-0.5A

-0.25A

-0.1A

0

0

-2

-4

-6

-8

-10

VGS-Gate Source Voltage (Volts)

Voltage Saturation Characteristics

-1.6

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0

0

VDS=-10V

-2

-4

-6

-8

-10

VGS-Gate Source Voltage (Volts)

Transfer Characteristics

100

VGS=-4V

-5V -7V

10

-10V

-20V

1 10

100

1000

ID-Drain Current (mA)

On-resistance v drain current

2.6

2.4

2.2

VGS=-10V

2.0

ID=-0.375A

1.8

1.6

1.4

1.2

Drain-Source

Resistance

RDS(on)

VGS=VDS

1.0

0.8

Gate

Threshold

Voltage

ID=-1mA

VGS(th)

0.6

-40 -20 0 20 40 60 80 100 120 140 160 180°C

Normalised RDS(on) and VGS(th) vs Temperature

3-422

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