1N5391 データシートの表示（PDF） - Jiangsu High diode Semiconductor Co., Ltd
部品番号
コンポーネント説明
メーカー
1N5391 Datasheet PDF : 4 Pages
| |||
1N5391 THRU 1N5399
DO-1 5 Plastic-Encapsulate Diodes
HD ZC55
Features
●Io
1.5A
●VRRM
50V-1000V
●High surge current capability
●Polarity: Color band denotes cathode
DO-1 5
Applications
● Rectifier
Marking
● 1N539X
X:From 1 to 9
Item
Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Average Forward Current
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
Symbol Unit
VRRM
V
VRMS
V
Conditions
1N53
91 92 93 95 97 98 99
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
IF(AV)
A
60Hz Half-sine wave, Resistance
load, Ta=50℃
1.5
IFSM
TJ
TSTG
A
60Hz Half-sine wave,1 cycle,
Ta=25℃
℃
℃
50
-55~+125
-55 ~ +150
Electrical Characteristics (T=25℃ Unless otherwise specified）
Item
Peak Forward Voltage
Peak Reverse Current
Thermal
Resistance(Typical)
Symbol
VFM
IRRM1
IRRM2
RθJ-A
RθJ-L
Unit
V
μA
℃/W
Test Condition
IFM=1.5A
VRM=VRRM
Ta=25℃
Ta=125℃
Between junction and ambient
Between junction and lead
Max
1.1
5
50
25
20
High Diode Semiconductor
1
Share Link: 