TIP33C_02 データシートの表示（PDF） - ON Semiconductor

部品番号

コンポーネント説明

メーカー

TIP33C_02

Complementary Silicon High-Power Transistors

ON Semiconductor 

TIP33C TIP34C

15

10

5.0

3.0

2.0

1.0

0.5

0.2

0.1

1.0

1.0Ăms

300õs

10Ăms

dc

SECONDARY BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMAL LIMIT

TC = 25°C

2.0 3.0 5.0 7.0 10

20 30 50 70 100

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 2. Maximum Rated Forward Bias

Safe Operating Area

20

L = 200 µH

IC/IB ≥ 5.0

15

VBE(off) = 0 to 5.0 V

TC = 100°C

10

5.0

0

0

20

40

60

80

100

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 3. Maximum Rated Forward Bias

Safe Operating Area

FORWARD BIAS

The Forward Bias Safe Operating Area represents the

voltage and current conditions these devices can withstand

during forward bias. The data is based on TC = 25_C; TJ(pk)

is variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10%, and must be

derated thermally for TC > 25_C.

REVERSE BIAS

The Reverse Bias Safe Operating Area represents the

voltage and current conditions these devices can withstand

during reverse biased turn–off. This rating is verified under

clamped conditions so the device is never subjected to an

avalanche mode.

http://onsemi.com

3

Share Link: