BAV100L0G データシートの表示（PDF） - TSC Corporation
部品番号
コンポーネント説明
メーカー
BAV100L0G Datasheet PDF : 4 Pages
| |||
Small Signal Product
CREAT BY ART
BAV100/101/102/103
Taiwan Semiconductor
Hermetically Sealed Glass High Voltage Switching Diodes
FEATURES
- High voltage switching device
- Ideal for automated placement
- Hermetically sealed glass
- Compression bonded construction
- All external surfaces are corrosion
resistant and leads are readily solderable
- RoHS compliant
MINI MELF
MECHANICAL DATA
- Polarity: Indicated by black cathode band
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
PD
500
Repetitive Peak Reverse Voltage
VRRM
250
Average Rectified Forward Current
IF(AV)
200
Non-Repetitive Peak Forward
Surge Current
Pulse Width = 1.0 s
Pulse Width = 1.0 μs
IFSM
1.0
4.0
Operating and Storage Temperature Range
TJ , TSTG
-65 to +200
Electrical Characteristics
PARAMETER
SYMBOL
BAV100 IR = 100 μA
Breakdown Voltage
BAV101 IR = 100 μA
BAV102 IR = 100 μA
BV
BAV103 IR = 100 μA
Forward Voltage
IF = 100 mA
VF
BAV100 VR = 50 V
Peak Reverse Current
BAV101 VR = 100 V
BAV102 VR = 150 V
IR
BAV103 VR = 200 V
Thermal Resistance, Junction to Ambient
RθJA
Junction Capacitance
VR = 0 , f = 1.0 MHz
CJ
Reverse Recovery Time
(Note)
trr
Notes : Reverse recovery test conditions : IF = IR = 30 mA , Irr = 30 mA , RL = 100 Ω
MIN
MAX
60
120
-
200
250
-
1.0
100
100
-
100
100
350
-
5.0
-
50
UNIT
mW
V
mA
A
oC
UNIT
V
V
nA
oC/W
pF
ns
Document Number: DS_S1501002
Version: B15
Share Link: 