KSA708 データシートの表示（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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KSA708

TO-92L Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

JC(T

TO-92L Plastic-Encapsulate Transistors

KSA708 TRANSISTOR (PNP)

FEATURES

z Low Collector-Emitter Saturation Voltage

z Low Frequency Amplifier&Medium Speed Switching

TO – 92L

1. EMITTER

2. BASE

3. COLLECTOR

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

-80

-60

-8

-0.7

800

156

150

-55~+150

Unit

V

V

V

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Transition frequency

Symbol

Test conditions

Min Typ Max Unit

V(BR)CBO IC= -100µA,IE=0

-80

V

V(BR)CEO IC=-10mA,IB=0

-60

V

V(BR)EBO IE=-100µA,IC=0

-8

V

ICBO

VCB=-60V,IE=0

-0.1

μA

IEBO

VEB=-5V,IC=0

-0.1

μA

hFE

VCE=-2V, IC=-50mA

40

240

VCE(sat) IC=-500mA,IB=-50mA

-0.7

V

VBE (sat) IC=-500mA,IB=-50mA

-1.1

V

Cob

VCB=-10V,IE=0, f=1MHz

13

pF

fT

VCE=-10V,IC=-50mA

50

MHz

CLASSIFICATION OF hFE

RANK

RANGE

R

40-80

O

70-140

Y

120-240

www.cj-elec.com

1

AC,,JMuna,r2,2001146

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