MMBT5551 データシートの表示（PDF） - Galaxy Semi-Conductor
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MMBT5551 Datasheet PDF : 4 Pages
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Production specification
NPN General Purpose Transistor
MMBT5551
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol Parameter
Test conditions
MIN. MAX. UNIT
V(BR)CBO Collector-base breakdown voltage
IC=100μA,IE=0
180
V(BR)CEO Collector-emitter breakdown voltage IC=0.1mA,IB=0
160
V(BR)EBO Emitter-base breakdown voltage
IE=10μA,IC=0
6
ICBO
collector cut-off current
IE = 0; VCB = 120V
-
50 nA
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cobo
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
transition frequency
Output capacitance
IC = 0; VEB = 4V
VCE = 5V; IC= 1mA
VCE = 5V;IC = 10mA
VCE = 5V;IC = 50mA
IC = 10mA; IB=1mA
IC = 50mA; IB = 5mA
IC=10mA; IB=1mA
IC=50mA; IB=5mA
IC=10mA; VCB=10V;
f=100MHz
IE=10mA; VCE =10V;
f=1.0MHz
-
50 nA
80
-
100 300
30
-
0.15
-
V
0.2
1
-
V
1
100 300 MHz
6.0 pF
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
C065
Rev.A
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