LM317M_04 データシートの表示（PDF） - ON Semiconductor
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LM317M_04 Datasheet PDF : 16 Pages
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LM317M
ELECTRICAL CHARACTERISTICS (VI − VO = 5.0 V; IO = 0.1 A, TJ = Tlow to Thigh (Note 6), unless otherwise noted.)
LM317MA / LM317MAB
Characteristics
Figure
Symbol
Min
Typ
Max Unit
Line Regulation (Note 7) (TA = 25°C, 3.0 V ≤ VI − VO ≤ 40 V)
3
Regline
−
0.01
0.04
%/V
Load Regulation (Note 7)
TA = 25°C, 10 mA ≤ IO ≤ 0.5 A
VO ≤ 5.0 V
VO ≥ 5.0 V
4
Regload
−
5.0
25
mV
−
0.1
0.5
% VO
Adjustment Pin Current
5
IAdj
−
50
100
mA
Adjustment Pin Current Change
2.5 V ≤ VI − VO ≤ 40 V, 10 mA ≤ IL ≤ 0.5 A, PD ≤ Pmax
3, 4
DIAdj
−
0.2
5.0
mA
Reference Voltage
3.0 V ≤ VI − VO ≤ 40 V, 10 mA ≤ IL ≤ 0.5 A, PD ≤ Pmax
5
Vref
1.225 1.250 1.275
V
Line Regulation (Note 7)
3.0 V ≤ VI−VO ≤ 40 V
3
Regline
−
0.02
0.07
%/V
Load Regulation (Note 7)
10 mA ≤ IO ≤ 0.5 A
VO ≤ 5.0 V
VO ≥ 5.0 V
4
Regload
−
20
70
mV
−
0.3
1.5
% VO
Temperature Stability (Tlow ≤ TJ ≤ Thigh)
5
TS
−
0.7
−
% VO
Minimum Load Current to Maintain Regulation (VI − VO = 40 V)
5
ILmin
−
3.5
10
mA
Maximum Output Current
VI − VO ≤ 15 V, PD ≤ Pmax
VI − VO = 40 V, PD ≤ Pmax, TA = 25°C
5
Imax
A
0.5
0.9
−
0.15 0.25
−
RMS Noise, % of VO (TA = 25°C, 10 Hz ≤ f ≤ 10 kHz)
−
N
−
−
−
% VO
Ripple Rejection, VO = 10 V, f = 120 Hz (Note 8)
Without CAdj
CAdj = 10 mF
6
RR
dB
−
65
−
66
80
−
Long−Term Stability, TJ = Thigh (Note 9)
TA= 25°C for End−point Measurements
5
S
−
0.3
1.0 %/1.0
kHrs.
6. Tlow to Thigh = 0° to +125°C for LM317MA Tlow to Thigh = − 40° to +125°C for LM317MAB.
7. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account
separately. Pulse testing with low duty cycle is used.
8. CAdj, when used, is connected between the adjustment pin and ground.
9. Since Long−Term Stability cannot be measured on each device before shipment, this specification is an engineering estimate of average
stability from lot−to−lot.
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