WME128K8 データシートの表示（PDF） - Microsemi Corporation
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WME128K8 Datasheet PDF : 12 Pages
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WME128K8-XXX
PAGE WRITE OPERATION
The WME128K8-XXX has a page write operation that allows one
to 128 bytes of data to be written into the device and consecutively
loads during the internal programming period. Successive bytes
may be loaded in the same manner after the first data byte has
been loaded. An internal timer begins a time out operation at each
write cycle. If another write cycle is completed within 150μs or less,
a new time out period begins. Each write cycle restarts the delay
period. The write cycles can be continued as long as the interval
is less than the time out period.
The usual procedure is to increment the least significant address
lines from A0 through A6 at each write cycle. In this manner a page
of up to 128 bytes can be loaded in to the EEPROM in a burst mode
before beginning the relatively long interval programming cycle.
After the 150μs time out is completed, the EEPROM begins an
internal write cycle. During this cycle the entire page of bytes will
be written at the same time. The internal programming cycle is the
same regardless of the number of bytes accessed.
PAGE WRITE CHARACTERISTICS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Page Mode Write Characteristics
Symbol Min
Max
Unit
Parameter
Write Cycle Time, TYP = 6ms
Address Set-up Time
Address Hold Time (1)
Data Set-up Time
Data Hold Time
Write Pulse Width
Byte Load Cycle Time
Write Pulse Width High
twc
10
ms
tas
10
ns
tah
100
ns
tds
50
ns
tdh
10
ns
twp
100
ns
tblc
150
μs
twph
50
ns
1. Page address must remain valid for duration of write cycle.
FIGURE 7 – PAGE MODE WRITE WAVEFORMS
OE#
CS#
WE#
t WP
t WPH
t AS
t AH
ADDRESS
VALID
ADDRESS
t DS
t DH
DATA
VALID DATA
BYTE 0
BYTE 1
t BLC
BYTE 2
t WC
BYTE 3
BYTE 127
Microsemi Corporation reserves the right to change products or specifications without notice.
July 2011 © 2011 Microsemi Corporation. All rights reserved.
7
Rev. 7
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
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