BTA416Y-800C,127 データシートの表示（PDF） - NXP Semiconductors.

部品番号

コンポーネント説明

メーカー

BTA416Y-800C,127

3Q Hi-Com Triac

NXP Semiconductors. 

BTA416Y-800C

3Q Hi-Com Triac

10 June 2014

Product data sheet

1. General description

Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB)

internally insulated plastic package intended for use in circuits where high static and

dynamic dV/dt and high dI/dt can occur. This "series C" triac will commutate the full RMS

current at the maximum rated junction temperature without the aid of a snubber. This

device has high Tj operating capability and an internally isolated mounting base.

2. Features and benefits

• 3Q technology for improved noise immunity

• High commutation capability with maximum false trigger immunity

• High immunity to false turn-on by dV/dt

• High surge capability

• High Tj(max)

• Isolated mounting base with 2500 V (RMS) isolation

• Less sensitive gate for high noise immunity

• Planar passivated for voltage ruggedness and reliability

• Triggering in three quadrants only

3. Applications

• Electronic thermostats (heating and cooling)

• High power motor controls

• Rectifier-fed DC inductive loads e.g. DC motors and solenoids

4. Quick reference data

Table 1.

Symbol

VDRM

ITSM

Tj

IT(RMS)

Quick reference data

Parameter

Conditions

repetitive peak off-

state voltage

non-repetitive peak on- full sine wave; Tj(init) = 25 °C;

state current

tp = 20 ms; Fig. 4; Fig. 5

junction temperature

RMS on-state current full sine wave; Tmb ≤ 108 °C; Fig. 1;

Fig. 2; Fig. 3

Min Typ Max Unit

-

-

800 V

-

-

160 A

-

-

150 °C

-

-

16

A

Scan or click this QR code to view the latest information for this product

Share Link: