PS2502L-1-E3 データシートの表示（PDF） - NEC => Renesas Technology
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PS2502L-1-E3
NEC => Renesas Technology
PS2502L-1-E3 Datasheet PDF : 12 Pages
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PS2502-1,-2,-4,PS2502L-1,-2,-4
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
PS2502-1,
PS2502L-1
PS2502-2,-4
PS2502L-2,-4
Diode
Reverse Voltage
VR
6
V
Forward Current (DC)
IF
80
mA
Power Dissipation Derating ∆PD/°C
1.5
1.2
mW/°C
Power Dissipation
PD
Peak Forward Current*1
IFP
150
120
1
mW/ch
A
Transistor Collector to Emitter Voltage VCEO
40
V
Emitter to Collector Voltage VECO
6
V
Collector Current
IC
200
160
mA/ch
Power Dissipation Derating ∆PC/°C
2.0
1.6
mW/°C
Power Dissipation
Isolation Voltage*2
PC
200
160
mW/ch
BV
5 000
Vr.m.s.
Operating Ambient Temperature
TA
–55 to +100
°C
Storage Temperature
Tstg
–55 to +150
°C
*1 PW = 100 µs, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Symbol
Conditions
MIN. TYP.
Diode
Forward Voltage
VF
IF = 10 mA
1.17
Reverse Current
IR
VR = 5 V
Terminal Capacitance
Ct V = 0 V, f = 1.0 MHz
50
Transistor
Coupled
Collector to Emitter Dark
Current
Current Transfer Ratio*1
ICEO VCE = 40 V, IF = 0 mA
CTR IF = 1 mA, VCE = 2 V
200 2 000
Collector Saturation
Voltage
VCE (sat) IF = 1 mA, IC = 2 mA
Isolation Resistance
RI-O VI-O = 1.0 kV
1011
Isolation Capacitance
CI-O V = 0 V, f = 1.0 MHz
0.5
Rise Time *2
tr
VCC = 10 V, IC = 2 mA, RL = 100 Ω
100
Fall Time *2
tf
100
*1 CTR rank (only PS2502-1, PS2502L-1)
K : 2 000 to
(%)
L : 700 to 3 400 (%)
M : 200 to 1 000 (%)
*2 Test circuit for switching time
Pulse Input
PW = 1 ms
Duty Cycle = 1/10
IF
50 Ω
MAX. Unit
1.4
V
5
µA
pF
400
nA
%
1.0
V
Ω
pF
µs
VCC
VOUT
RL = 100 Ω
4
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