APM2510NU データシートの表示（PDF） - Anpec Electronics

部品番号

コンポーネント説明

メーカー

APM2510NU

N-Channel Enhancement Mode MOSFET

Anpec Electronics 

APM2510NU

Absolute Maximum Ratings

Symbol

Parameter

Common Ratings (TA=25°C Unless Otherwise Noted)

VDSS Drain-Source Voltage

VGSS Gate-Source Voltage

TJ Maximum Junction Temperature

TSTG Storage Temperature Range

IS Diode Continuous Forward Current

IDP 300µs Pulse Drain Current Tested

ID Continuous Drain Current

PD Maximum Power Dissipation

RθJC Thermal Resistance-Junction to Case

RθJA Thermal Resistance-Junction to Ambient

EAS Drain-Source Avalanche Energy, L=0.5mH

Notes:

* Current limited by bond wire.

TC=25°C

TC=25°C

TC=100°C

TC=25°C

TC=100°C

TC=25°C

TC=100°C

Rating

25

±20

150

-55 to 150

30

120

80

50*

35

50

20

2.5

50

100

Unit

V

°C

°C

A

A

A

W

°C/W

°C/W

mJ

Electrical Characteristics

(T

A

=

25°C)

Symbol

Parameter

Test Conditions

APM2510NU

Unit

Min. Typ. Max.

Static Characteristics

BVDSS Drain-Source Breakdown Voltage

IDSS Zero Gate Voltage Drain Current

VGS(th) Gate Threshold Voltage

IGSS Gate Leakage Current

RDS(ON) a Drain-Source On-state Resistance

Diode Characteristics

VSDa Diode Forward Voltage

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

VGS=0V, IDS=250µA

25

VDS=20V, VGS=0V

TJ=85°C

VDS=VGS, IDS=250µA

1.3

VGS=±20V, VDS=0V

VGS=10V, IDS=30A

VGS=4.5V, IDS=15A

ISD=15A, VGS=0V

IDS=30A, dlSD/dt=100A/µs

V

1

µA

30

1.8 2.5 V

±100 nA

8.5 10

mΩ

15 20

0.8 1.1 V

20

ns

10

nC

Copyright © ANPEC Electronics Corp.

2

Rev. A.2 - Jul., 2008

www.anpec.com.tw

Share Link: