BDX35 データシートの表示（PDF） - Comset Semiconductors

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BDX35

NPN SILICON PLANAR EPITAXIAL POWER TRANSISTORS

Comset Semiconductors 

NPN BDX35 – BDX36 – BDX37

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Max Unit

ICBO

IEBO

VCE(SAT)

VBE(SAT)

hFE

IE=0 , VCB=80 V

BDX35 -

- 10

IE=0 , VCB=100 V

BDX36 -

- 10

IE=0 , VCB=100 V

BDX37 -

- 10

Collector cut-off current

IE=0 , VCB=80 V

Tj = 100°C

BDX35 -

-

50 µA

IE=0 , VCB=100 V

Tj = 100°C

BDX36 -

- 50

IE=0 , VCB=100 V

Tj = 100°C

BDX37 -

- 50

BDX35 -

- 10

IC=0, VEB=4 V

BDX36 -

- 10 µA

Emitter cut-offcurrent

BDX37 -

BDX35 -

- 10

-

1

IC=0, VEB=5 V

BDX36 -

-

1 mA

BDX37 -

-

1

IC=5.0 A

IB=500 mA

BDX35 -

BDX36 -

- 0,9

- 0,7

Collector-Emitter saturation

BDX37 -

- 0,9

Voltage (*)

IC=7.0 A

IB=700 mA

BDX35 -

BDX36 -

BDX37 -

- 1,2 V

-

-

- 1,2

IC=10 A, IB=1A

BDX36 -

- 1,5

BDX35

Base-Emitter saturation

Voltage (*)

IC=5.0 A, IB=500 mA BDX36 -

BDX37

IC=7.0 A, IB=700 mA

BDX35

BDX37

-

-

- 1 ,6

-

2,0 V

- 2,0

IC=10 A, IB=1A

BDX36 -

- 2,5

BDX35

BDX36 45 - 450

DC Current Gain (*)

VCE=10 V

IC=500m A

BDX37

BDX35

BDX36

130

-

BDX37 - 80

23/10/2012

COMSET SEMICONDUCTORS

2|3

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