MRF177 データシートの表示（PDF） - Motorola => Freescale

部品番号

コンポーネント説明

メーカー

MRF177

100 W, 28 V, 400 MHz N–CHANNEL BROADBAND RF POWER MOSFET

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic (1)

Symbol

Min

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 50 mA)

V(BR)DSS

65

Zero Gate Voltage Drain Current

(VDS = 28 V, VGS = 0)

IDSS

—

Gate–Source Leakage Current

(VGS = 20 V, VDS = 0)

IGSS

—

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = 10 V, ID = 50 mA)

VGS(th)

1.0

Drain–Source On–Voltage

(VGS = 10 V, ID = 3.0 A)

VDS(on)

—

Forward Transconductance

(VDS = 10 V, ID = 2.0 A)

gfs

1.8

DYNAMIC CHARACTERISTICS (1)

Input Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

Ciss

—

Output Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

Coss

—

Reverse Transfer Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

Crss

—

FUNCTIONAL CHARACTERISTICS (Figure 8) (2)

Common Source Power Gain

(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA)

GPS

10

Drain Efficiency

(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA)

η

55

Electrical Ruggedness

ψ

(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA,

Load VSWR = 30:1, All Phase Angles At Frequency of Test)

(1) Note each transistor chip measured separately

(2) Both transistor chips operating in push–pull amplifier

Typ

Max

Unit

—

—

Vdc

—

2.0

mAdc

—

1.0

µAdc

3.0

6.0

Vdc

—

1.4

Vdc

2.2

—

mhos

100

—

pF

105

—

pF

10

—

pF

12

—

dB

60

—

%

No Degradation

in Output Power

Before & After Test

MRF177

2

MOTOROLA RF DEVICE DATA

Share Link: