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2N7002KDW データシートの表示(PDF) - HY ELECTRONIC CORP.
部品番号
コンポーネント説明
メーカー
2N7002KDW
60V ESD Protected N-Channel Enhancement Mode MOSFET
HY ELECTRONIC CORP.
2N7002KDW Datasheet PDF : 4 Pages
1
2
3
4
2N7002KDW
Electrical Characteristics ( T
C
=25
O
C, unless otherwise noted )
Parameter
S ymb o l
Te s t C o nd i ti o n
Static
Drain-Source Breakdown Voltag e
Gate Threshold Voltage
Drain-Source On-State
Re s i s ta nc e
Zero Gate Voltage Drain
C ur r e nt
Gate Body Leakage
Dynamic
B V
DSS
V
GS(th)
R
D S (o n)
I
DSS
I
GSS
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
GS
= 10V, I
D
= 500mA
V
GS
= 4.5V, I
D
= 200mA
V
DS
=60V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
To ta l Ga te C ha rg e
Gate-Source Charge
Gate-Drain Charge
Turn-On Ti me
Turn-Off Ti me
Input C apaci tance
Output Capacitance
Re ve rs e Tra nsfe r
C a p a c i ta nc e
Source-Drain Diode
Q
g
Q
gs
Q
gd
t
on
t
off
C
iss
C
oss
C
rss
V
DS
=3 0 V, I
D
=2 0 0
m
A
V
GS
=
4 .5
V
V
DD
=30V ,I
D
=200m
A
V
GS
=10V
,
R
G
=10
Ω
V
DS
=25V, V
GS
=0V
f=1.0MH
Z
Max. Diode Forward Current
I
S
Max.Pulsed Source Current
I
SM
Diode Forward Voltage
V
SD
-
-
I
S
=2 0 0 A , V
GS
=0 V
Min.
60
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ .
-
-
1.3
1.8
-
-
0.6
0.16
0.24
12.8
28
36
4.8
2.4
-
-
0.84
Max. Units
-
V
2.5
V
2
Ω
3
Ω
1
uA
+10
υΑ
0.8
0.2
nC
0.32
20
ns
38
45
9.6
pF
4.2
300
mA
2000 mA
1.3
V
REV1.0 : OCT. 2011
Switching Test Circuit
Gate Charge Test Circuit
PAGE . 2
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