D1351 データシートの表示（PDF） - Thinki Semiconductor Co., Ltd.

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D1351

NPN Complementary Silicon Power Transistors

Thinki Semiconductor Co., Ltd. 

2SD1351

®

2SD1351

Pb

Pb Free Plating Product

NPN Complementary Silicon Power Transistors

FEATURES

z Complements the 2SB988.

z Wide Safe Operationg Area.

z Fast Switching Speed.

z Wide ASO.

APPLICATIONS

z Power Amplifier Applications.

z Vertical Output Applications.

z Switching Applications.

TO-220C

COLLECTOR

2

BASE

1

3

EMITTER

1. BASE

2. COLLECTOR

3. EMITTER

23

1

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)

Parameter

l

Value Unit

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Total Dissipation at

Max. Operating Junction Temperature

Storage Temperature

VCEO

VEBO

IC

IB

Ptot

Tj

Tstg

60

V

7

V

3.0 A

0.5 A

30 W

150 oC

-55~150 oC

9.90±0.20

φ3.60±0.20

4.50±0.20

1.30±0.20

1.27±0.20

1.52±0.20

2.40±0.20

2.54typ

2.54typ

0.80±0.20

TO-220C Package Dimension

0.50±0.20

Dimensions in Millimeters

ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)

Parameter

Symbol Test Conditions

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Sustaining Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

ICBO

IEBO

VCEO

hFE(1)

hFE(2)

VCE(sat)

VBE(sat)

fT

VCB=60V, IE=0

VEB=7V, IC=0

IC=50mA, IB=0

VCE=5V, IC=0.5A

VCE=4V, IC=3.0A

IC=2A,IB=200mA

VCE=5V,IC=0.5A

VCE=5V,IC=500mA

Min.

—

—

60

60

25

—

—

3.0

Typ.

—

—

—

—

—

—

—

—

Max. Unit

0.1 mA

0.1 mA

—

V

300

—

1.0 V

1.0 V

— MHz

Rev.04

© 2006 Thinki Semiconductor Co.,Ltd.

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