FDFME3N311ZT_ データシートの表示（PDF） - Fairchild Semiconductor

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FDFME3N311ZT_

LOW VOLTAGE DISCRETE SOLUTIONS

Fairchild Semiconductor 

LOW VOLTAGE DISCRETE SOLUTIONS

FDFME3N311ZT AND FDMA6023PZT IN MICROFET™ 2X2 & 1.6X1.6

Fairchild’s Offering

Designed with its proprietary PowerTrench® process technology, Fairchild Semiconductor offers low voltage discrete

solutions for portable applications with excellent thermal performance and high efficiency in ultra-compact form

factors. Even under limited PCB space, Fairchild’s discrete solutions can offer exceptional power dissipation to

reduce heat generation and power consumption.

Features & Benefits

• Small footprint saves PCB space

• Exposed leadframe enables great thermal performance

• Low RDS(ON) provides excellent efficency

Part Number

Configuration

Specifications

FDFME3N311ZT

N-Channel + Schottky

Package

(mm)

BVDSS

Min.

(V)

VGS

(V)

VGS(th)

Max.

(V)

RDS(ON)

Max.

(m)

Qg Typ.

@ VGS = 4.5V

(nC)

ID

(A)

PD

(W)

4.5V

2.5V

1.5V

Reverse Leakage (µA)

(VR=28V)

Forward Voltage (V)

(IF = 0.5A)

MicroFET Thin

1.6 x 1.6 x 0.55

30

± 12

1.5

299

410

N/A

1

1.6

1.1

Schottky Diode

100

0.48

FDMA6023PZT

Dual P-Channel

MicroFET Thin

2 x 2 x 0.55

-20

±8

-1.5

60

80

170

12

-3.6

1.4

N/A

N/A

Saving our world, 1mW at a time™

www.fairchildsemi.com

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