IRFR3709Z データシートの表示（PDF） - Inchange Semiconductor

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IRFR3709Z

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

IRFR3709Z, IIRFR3709Z

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA

VGS(th)

Gate Threshold Voltage

VDS=VGS; ID=250μA

RDS(on)

Drain-Source On-Resistance

VGS=10V; ID=15A

IGSS

Gate-Source Leakage Current

VGS= ±20V

IDSS

Drain-Source Leakage Current

VDS=24V; VGS= 0V

VSD

Diode forward voltage

Is=12A, VGS = 0V

MIN TYP MAX UNIT

30

V

1.35

2.25

V

6.5 mΩ

±0.1 μA

1

μA

1.0

V

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