isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF3708, IIRF3708
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID = 250µA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=250μA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=15A
IGSS
Gate-Source Leakage Current
VGS=± 12V
IDSS
Drain-Source Leakage Current VDS=24V; VGS= 0V
VSD
Diode forward voltage
IS =31A, VGS = 0 V
MIN TYP MAX UNIT
30
V
0.6
2.0
V
12.0 mΩ
±0.2 μA
20
μA
1.3
V
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