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SD1127 データシートの表示(PDF) - New Jersey Semiconductor

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SD1127 Datasheet PDF : 3 Pages
1 2 3
<3\ U
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
RF & MICROWAVE TRANSISTORS
VHP FM MOBILE APPLICATIONS
Features
• 175MHz
• 12.5 VOLTS
• POUT = 4.0 W MINIMUM
• GP=12.0dB
• GROUNDED EMITTER
DESCRIPTION:
The SD1127 is a epitaxial silicon NPN transistor designed
primarily for VHP mobile communications. The chip of this
transistor is mounted on a beryllia pill to isolate the collector
lead and ground the emitter lead for high gain performance
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
SD1127
I
1. Collector
2. Base
3. Emitter
TO-39
ABSOtUTE MAXIMUM RATINGS (Tease = 25 C)
Symbol
VCBO
VCEO
VCES
VEBO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter - Base Voltage
Ic
Collector Current
Ptot
Total Power Dissipation
TSTG
Storage Temperature
Tj
Junction Temperature
Value
36
18
36
4.0
.64
8.0
-65 + 200
+200
Unit
V
V
V
V
A
W
°c
°c
Thermal Data
RlH(J-C) | Junction-case Thermal Resistance
^_
21.9
°C/W
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors

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