2N5415S データシートの表示（PDF） - STMicroelectronics

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2N5415S

HIGH-VOLTAGE AMPLIFIER

STMicroelectronics 

2N5415S

THERMAL DATA

Rth j-cas e Thermal Resistance Junction-case

R th j-amb Thermal Resistance Junction-ambient

Max

17.5

Max

175

°C/W

°C/W

ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

ICBO

ICEO

IEBO

V( BR) CEO *

VCE( sat )*

VB E *

hFE*

fT

Collector Cutoff Current

(IE = 0)

Collector Cutoff Current

(IB = 0)

Emitter Cutoff Current

(IC = 0)

Collector-emitter

Breakdown Voltage

(IB = 0)

Collector-emitter

Saturation Voltage

Base-Emitter Voltage

DC Current Gain

Transition Frequency

VCB = – 175 V

VCE = – 150 V

VEB = – 4 V

IC = – 2 mA

– 200

I C = – 50 mA IB = – 5 mA

IC = – 50 mA VCE = – 10 V

IC = – 50 A

VCE = – 10 V

30

I C = – 10 mA VCE = – 10 V

f = 5 MHz

15

C CBO

Collector-base

Capacitance

IE = 0

f = 1 MHz

VCB = – 10 V

* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.

Typ.

Max.

– 50

– 50

– 20

– 2.5

– 1.5

150

15

Unit

µA

µA

µA

V

V

V

MHz

pF

2/4

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