MDD14N25C データシートの表示（PDF） - MagnaChip Semiconductor
部品番号
コンポーネント説明
メーカー
MDD14N25C Datasheet PDF : 6 Pages
| |||
Ordering Information
Part Number
MDD14N25CRH
Temp. Range
-55~150oC
Package
D-pak
Packing
Reel & Tape
RoHS Status
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Test Condition
Min
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
250
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
2.0
Drain Cut-Off Current
IDSS
VDS = 250V, VGS = 0V
-
Gate Leakage Current
IGSS
VGS = ±30V, VDS = 0V
-
Drain-Source ON Resistance
RDS(ON)
VGS = 10V, ID = 5.1 A
-
Forward Transconductance
gfs
VDS = 30V, ID = 5.1A
-
Dynamic Characteristics
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
IS
Source-Drain Diode Forward Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
-
VDS = 200V, ID = 14.0A, VGS = 10V
-
-
-
VDS = 25V, VGS = 0V, f = 1.0MHz
-
-
-
VGS = 10V, VDS = 125V, ID = 14.0A,
-
RG = 25Ω(3)
-
-
-
IS = 10.2A, VGS = 0V
-
-
IF = 14.0A, dl/dt = 100A/μs(3)
-
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤10.2A, di/dt≤300A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C
4. L=8.5mH, IAS=10.2A, VDD=50V, Rg=26Ohm, Starting TJ=25oC
Typ
-
-
-
-
0.22
8.5
20.0
4.5
8.9
741
15
142
13
42
44
28
-
-
174
1.0
Max
-
4.0
1
100
0.28
-
-
-
-
-
-
-
-
-
-
-
10.2
1.4
-
-
Unit
V
μA
nA
Ω
S
nC
pF
ns
A
V
ns
μC
Nov. 2011 Version 1.0
2
MagnaChip Semiconductor Ltd.
Share Link: 