FCPF11N60T データシートの表示（PDF） - Fairchild Semiconductor
部品番号
コンポーネント説明
メーカー
FCPF11N60T Datasheet PDF : 11 Pages
| |||
Elerical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA, TJ = 25°C 600
--
VGS = 0 V, ID = 250 μA, TJ = 150°C --
650
--
--
V
V
ΔBVDSS Breakdown Voltage Temperature
/ ΔTJ Coefficient
ID = 250 μA, Referenced to 25°C
-- 0.6
-- V/°C
BVDS
Drain-Source Avalanche Break-
down Voltage
VGS = 0 V, ID = 11 A
-- 700
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
--
--
1
μA
--
--
10
μA
IGSSF
Gate-Body Leakage Current, For-
ward
VGS = 30 V, VDS = 0 V
--
--
100 nA
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
-- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS
Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
ESR
Equivalent Series Resistance
VDS = VGS, ID = 250 μA
3.0 --
5.0
V
VGS = 10 V, ID = 5.5 A
-- 0.32 0.38 Ω
VDS = 40 V, ID = 5.5 A
(Note 4)
--
9.7
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDS = 480 V, VGS = 0 V,
f = 1.0 MHz
VDS = 0V to 480 V, VGS = 0 V
Drain Open, f=1MHz
-- 1148 1490 pF
-- 671 870 pF
--
63
82
pF
--
35
--
pF
--
95
--
pF
-- 2.5
--
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 11 A,
RG = 25 Ω
--
34
80
ns
--
98 205
ns
-- 119 250 ns
(Note 4, 5)
--
56 120
ns
VDS = 480 V, ID = 11 A,
--
40
52
nC
VGS = 10 V
-- 7.2
--
nC
(Note 4, 5) --
21
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Volt-
age
VGS = 0 V, IS = 11 A
--
--
11
A
--
--
33
A
--
--
1.4
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 11 A,
dIF / dt = 100 A/μs
-- 390
--
ns
(Note 4)
--
5.7
--
μC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 11A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor Corporation
Rev. B2, October 2003
Share Link: 