FGH40N60SMD データシートの表示（PDF） - Fairchild Semiconductor

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FGH40N60SMD

600 V, 40 A Field Stop IGBT

Fairchild Semiconductor 

April 2013

FGH40N60SMD

600 V, 40 A Field Stop IGBT

Features

• Maximum Junction Temperature : TJ = 175oC

• Positive Temperaure Co-efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: VCE(sat) = 1.9V(Typ.) @ IC = 40 A

• High Input Impedance

• Fast Switching: EOFF = 6.5 uJ/A

• Tighten Parameter Distribution

• RoHS Compliant

Applications

• Solar Inverter, UPS, Welder, PFC, Telecom, ESS

General Description

Using novel field stop IGBT technology, Fairchild®’s new series

of field stop 2nd generation IGBTs offer the optimum perfor-

mance for solar inverter, UPS, welder, telecom, ESS and PFC

applications where low conduction and switching losses are

essential.

E

C

G

COLLECTOR

(FLANGE)

Absolute Maximum Ratings

Symbol

VCES

VGES

IC

ICM (1)

IF

IFM (1)

PD

TJ

Tstg

TL

Description

Collector to Emitter Voltage

Gate to Emitter Voltage

Collector Current

Collector Current

Pulsed Collector Current

Diode Forward Current

Diode Forward Current

@ TC = 25oC

@ TC = 100oC

@ TC = 25oC

@ TC = 25oC

@ TC = 100oC

Pulsed Diode Maximum Forward Current

Maximum Power Dissipation

Maximum Power Dissipation

@ TC = 25oC

@ TC = 100oC

Operating Junction Temperature

Storage Temperature Range

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

Notes:

1: Repetitive rating: Pulse width limited by max. junction temperature

C

G

E

Ratings

600

 20

80

40

120

40

20

120

349

174

-55 to +175

-55 to +175

300

Unit

V

V

A

A

A

A

A

A

W

W

oC

oC

oC

©2010 Fairchild Semiconductor Corporation

1

FGH40N60SMD Rev. C0

www.fairchildsemi.com

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