FGH40N60SMD データシートの表示（PDF） - Fairchild Semiconductor
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FGH40N60SMD Datasheet PDF : 10 Pages
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Electrical Characteristics of the IGBT (Continued)
Symbol
Parameter
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
Test Conditions
VCE = 400V, IC = 40A,
VGE = 15V
Min.
-
-
-
Typ.
119
13
58
Max
180
20
90
Unit
nC
nC
nC
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM
Diode Forward Voltage
IF = 20A
TC = 25oC
TC = 175oC
Erec
Reverse Recovery Energy
TC = 175oC
trr
Diode Reverse Recovery Time IF =20A, dIF/dt = 200A/s
TC = 25oC
TC = 175oC
Qrr
Diode Reverse Recovery Charge
TC = 25oC
TC = 175oC
Min.
-
-
-
-
-
-
-
Typ.
2.3
1.67
48.9
36
110
46.8
445
Max
2.8
-
-
-
-
-
-
Unit
V
uJ
ns
nC
©2010 Fairchild Semiconductor Corporation
3
FGH40N60SMD Rev. C0
www.fairchildsemi.com
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