FGH80N60FD データシートの表示（PDF） - Fairchild Semiconductor

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FGH80N60FD

600 V Field Stop IGBT

Fairchild Semiconductor 

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

VFM

Diode Forward Voltage

IF = 20A

trr

Diode Reverse Recovery Time

IES =20A,

Irr

Diode Reverse Recovery Current dIES / dt = 200 A/s

Qrr

Diode Reverse Recovery Charge

TC = 25C

TC = 125C

TC = 25C

TC = 125C

TC = 25C

TC = 125C

TC = 25C

TC = 125C

Min.

-

-

-

-

-

-

-

-

Typ.

2.3

1.7

36

105

2.6

7.8

46.8

409

Max

2.8

-

-

-

-

-

-

-

Unit

V

ns

ns

nC

©2007 Fairchild Semiconductor Corporation

3

FGH80N60FD Rev. C1

www.fairchildsemi.com

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