TIP33C データシートの表示（PDF） - Central Semiconductor

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TIP33C

COMPLEMENTARY SILICON POWER TRANSISTORS

Central Semiconductor 

TIP33 TIP33A TIP33B TIP33C NPN

TIP34 TIP34A TIP34B TIP34C PNP

COMPLEMENTARY

SILICON POWER TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR TIP33 and TIP34

series devices are complementary silicon high power

transistors manufactured by the epitaxial base process,

designed for general purpose amplifier and switching

applications.

MARKING: FULL PART NUMBER

TO-218 TRANSISTOR CASE

MAXIMUM RATINGS: (TC=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation (TA=25°C)

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

Thermal Resistance

TIP33

SYMBOL TIP34

VCBO 40

VCEO 40

VEBO

IC

ICM

IB

PD

PD

TJ, Tstg

ΘJA

ΘJC

TIP33A TIP33B TIP33C

TIP34A TIP34B TIP34C

60

80

100

60

80

100

5.0

10

15

3.0

3.5

80

-65 to +150

35.7

1.56

UNITS

V

V

V

A

A

A

W

W

°C

°C/W

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

MIN

ICEO

VCE=30V (TIP33, TIP33A, TIP34, TIP34A)

ICEO

VCE=60V (TIP33B, TIP33C, TIP34B, TIP34C)

ICES

VCE=Rated VCEO

IEBO

VEB=5.0V

BVCEO

IC=30mA (TIP33, TIP34)

40

BVCEO

IC=30mA (TIP33A, TIP34A)

60

BVCEO

IC=30mA (TIP33B, TIP34B)

80

BVCEO

IC=30mA (TIP33C, TIP34C)

100

VCE(SAT) IC=3.0A, IB=0.3A

VCE(SAT) IC=10A, IB=2.5A

VBE(ON)

VCE=4.0V, IC=3.0A

VBE(ON)

VCE=4.0V, IC=10A

hFE

VCE=4.0V, IC=1.0A

40

hFE

VCE=4.0V, IC=3.0A

20

hfe

VCE=10V, IC=0.5A, f=1.0kHz

20

fT

VCE=10V, IC=0.5A, f=1.0MHz

3.0

MAX

0.7

0.7

0.4

1.0

1.0

4.0

1.6

3.0

100

UNITS

mA

mA

mA

mA

V

V

V

V

V

V

V

V

MHz

R1 (18-July 2013)

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