AM29F100B-90EC データシートの表示（PDF） - Advanced Micro Devices

部品番号

コンポーネント説明

メーカー

AM29F100B-90EC

1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

Advanced Micro Devices 

GENERAL DESCRIPTION

The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory

organized as 131,072 bytes or 65,536 words. The

Am29F100 is offered in 44-pin SO and 48-pin TSOP

packages. Word-wide data appears on DQ0-DQ15;

byte-wide data on DQ0-DQ7. The device is designed to be

programmed in-system with the standard system 5.0 Volt

VCC supply. A 12.0 volt VPP is not required for program or

erase operations. The device can also be programmed or

erased in standard EPROM programmers.

The standard device offers access times of 70, 90, 120,

and 150 ns, allowing high-speed microprocessors to op-

erate without wait states. To eliminate bus contention the

device has separate chip enable (CE#), write enable

(WE#) and output enable (OE#) controls.

The device requires only a single 5.0 volt power sup-

ply for both read and write functions. Internally

generated and regulated voltages are provided for the

program and erase operations.

The device is entirely command set compatible with the

JEDEC single-power-supply Flash standard. Com-

mands are written to the command register using

standard microprocessor write timings. Register con-

tents serve as input to an internal state machine that

controls the erase and programming circuitry. Write

cycles also internally latch addresses and data needed

for the programming and erase operations. Reading

data out of the device is similar to reading from other

Flash or EPROM devices.

Device programming occurs by executing the program

command sequence. This invokes the Embedded Pro-

gram algorithm—an internal algorithm that

automatically times the program pulse widths and veri-

fies proper cell margin.

Device erasure occurs by executing the erase com-

mand sequence. This invokes the Embedded Erase

algorithm—an internal algorithm that automatically

preprograms the array (if it is not already programmed)

before executing the erase operation. During erase, the

device automatically times the erase pulse widths and

verifies proper cell margin.

The host system can detect whether a program or

erase operation is complete by observing the RY/BY#

pin, or by reading the DQ7 (Data# Polling) and DQ6

(toggle) status bits. After a program or erase cycle has

been completed, the device is ready to read array data

or accept another command.

The Erase Suspend feature enables the system to put

erase on hold for any period of time to read data from,

or program data to, a sector that is not being erased.

The sector erase architecture allows memory sectors

to be erased and reprogrammed without affecting the

data contents of other sectors. The device is erased

when shipped from the factory.

The hardware data protection measures include a

low VCC detector automatically inhibits write operations

during power transitions. The hardware sector pro-

tection feature disables both program and erase

operations in any combination of the sectors of mem-

ory, and is implemented using standard EPROM

programmers. The temporary sector unprotect fea-

ture allows in-system changes to protected sectors.

The hardware RESET# pin terminates any operation

in progress and resets the internal state machine to

reading array data. The RESET# pin may be tied to the

system reset circuitry. A system reset would thus also

reset the device, enabling the system microprocessor

to read the boot-up firmware from the Flash memory.

The system can place the device into the standby mode.

Power consumption is greatly reduced in this mode.

AMD’s Flash technology combines years of Flash

memory manufacturing experience to produce the

h i gh est l eve l s o f qu al i ty, r el i a bi l i t y, a nd c o s t

effectiveness. The device electrically erases all bits

within a sector simultaneously via Fowler-Nordheim

tunneling. The bytes are programmed one byte at a

time using the EPROM programming mechanism of hot

electron injection.

Am29F100

2

Share Link: