2SC2655L-O-T9N-B(2005) データシートの表示（PDF） - Unisonic Technologies
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2SC2655L-O-T9N-B Datasheet PDF : 4 Pages
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2SC2655
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
Ic
2
A
Collector Current(Pulse)
Icp*
3
A
Base Current
IB
0.5
A
Collector Power Dissipation
Pc
900
mW
Junction Temperature
Storage Temperature
Note: * PW≦16ms, Duty Cycle≦50%.
TJ
150
°C
TSTG
-55 ~ +150
°C
1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER
Collector Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Switching Time(Turn-on Time)
SYMBOL
BVCEO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(SAT)
VBE(SAT)
fT
Cob
TEST CONDITIONS
IC= 10mA, IB= 0
VCB=50V, IE= 0
VEB= 5V, IC=0
VCE=2V, Ic=0.5A
VCE=2V, Ic=1.5A
IC=1A, IB=0.05A
IC=1A, IB=0.05A
VCE=2V, IC=0.5A
VCB= 10V, IE= 0, f=1MHz
20μs
INPUT
IB1
IB1
OUTPUT
IB2
tON
IB2
Vcc=30 V
IB1= -IB2=0.05A
DUTY CYCLE≦1%
MIN TYP MAX UNIT
50
V
1.0 µA
1.0 µA
70
240
40
0.5
V
1.2
V
100
MHz
30
pF
0.1
µS
CLASSIFICATION OF hFE(1)
RANK
RANGE
O
70-140
Y
120-240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R211-013,C
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