2SC2655G-O-R9N-B(2016) データシートの表示（PDF） - Unisonic Technologies
部品番号
コンポーネント説明
メーカー
2SC2655G-O-R9N-B Datasheet PDF : 4 Pages
| |||
2SC2655
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
50
V
VEBO
5
V
Collector Current
IC
2
A
Collector Current (Pulse) (Note 1)
ICP
3
A
Base Current
IB
SOT-23
0.5
A
350
Collector Power Dissipation
SOT-89
PC
500
mW
TO-92NL
900
Junction Temperature
TJ
150
C
Storage Temperature
TSTG
-55 ~ +150
C
Notes: 1. PW≦16ms, Duty Cycle≦50%.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
TEST CONDITIONS
BVCBO IC= 10μA, IE= 0
BVCEO IC= 10mA, IB= 0
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(SAT)
VBE(SAT)
fT
COB
IE= 10μA, IC= 0
VCB=50V, IE= 0
VEB= 5V, IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=1.5A
IC=1A, IB=0.05A
IC=1A, IB=0.05A
VCE=2V, IC=0.5A
VCB= 10V, IE= 0, f=1MHz
MIN TYP MAX UNIT
50
V
50
V
5
V
1.0 μA
1.0 μA
70
240
40
0.5
V
1.2
V
100
MHz
30
pF
Switching Time(Turn-on Time)
tON
IB1= -IB2=0.05A
DUTY CYCLE≦1%
CLASSIFICATION OF hFE1
RANK
RANGE
O
70-140
Y
120-240
0.1
μS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R211-013.I
Share Link: 