2SC2655-O-T9N-B データシートの表示（PDF） - Unisonic Technologies

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2SC2655-O-T9N-B

NPN SILICON TRANSISTOR

Unisonic Technologies 

2SC2655

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

VCBO

50

V

VCEO

50

V

VEBO

5

V

Ic

2

A

Collector Current(Pulse)

Icp(Note 1)

3

A

Base Current

Collector Power Dissipation

IB

SOT-23

Pc

TO-92NL

0.5

A

350

mW

900

Junction Temperature

Storage Temperature

Note: 1. PW≦16ms, Duty Cycle≦50%.

TJ

150

°C

TSTG

-55 ~ +150

°C

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)

PARAMETER

Collector Emitter Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base- Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

SYMBOL

BVCEO

ICBO

IEBO

hFE(1)

hFE(2)

VCE(SAT)

VBE(SAT)

fT

Cob

TEST CONDITIONS

IC= 10mA, IB= 0

VCB=50V, IE= 0

VEB= 5V, IC=0

VCE=2V, Ic=0.5A

VCE=2V, Ic=1.5A

IC=1A, IB=0.05A

IC=1A, IB=0.05A

VCE=2V, IC=0.5A

VCB= 10V, IE= 0, f=1MHz

MIN TYP MAX UNIT

50

V

1.0 μA

1.0 μA

70

240

40

0.5

V

1.2

V

100

MHz

30

pF

Switching Time(Turn-on Time)

tON

0.1

μS

IB1= -IB2=0.05A

DUTY CYCLE≦1%

„ CLASSIFICATION OF hFE(1)

RANK

RANGE

O

70-140

Y

120-240

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R211-013,E

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