75N75 データシートの表示（PDF） - Unisonic Technologies
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75N75 Datasheet PDF : 6 Pages
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75N75
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
VGS = 0 V, ID = 250 µA
VDS = 75 V, VGS = 0 V
VGS = 20V, VDS = 0 V
VGS = -20V, VDS = 0 V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS = 0 V, VDS = 25 V
f = 1MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD = 37.5V, ID =45A,
VGS=10V, RG=4.7Ω
VDS = 60V, VGS = 10 V
ID = 80A
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 2)
VSD
VGS = 0 V, IS = 80A
Continuous Source Current
IS
Pulsed Source Current (Note 1)
ISM
Reverse Recovery Time
Reverse Recovery Charge
tRR
IS = 80A, VDD = 25 V
QRR
dIF / dt = 100 A/µs
Note: 1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
MIN TYP MAX UNIT
75
V
1 µA
100 nA
-100 nA
2.0 3.0 4.0 V
9.5 11 mΩ
3700
pF
773
pF
86
pF
133 150 ns
208 232 ns
354 370 ns
246 260 ns
430 440 nC
70
nC
102
nC
1.5 V
80 A
320 A
132
ns
660
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-097.F
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