BFS540 データシートの表示（PDF） - Inchange Semiconductor
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BFS540 Datasheet PDF : 7 Pages
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
BFS540
DESCRIPTION
·Low Noise Figure
NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz
·High Current-Gain—Bandwidth Product
fT= 9 GHz TYP. @VCE = 8 V, IC = 40 mA, f = 1 GHz
APPLICATIONS
·Designed for RF wideband amplifier applications such as
satellite TV systems and RF portable communication
equipment with signal frequencies up to 2 GHz.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
15
V
VEBO Emitter-Base Voltage
2.5
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
120
mA
0.5
W
175
℃
-65~150
℃
isc website：www.iscsemi.cn
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