D2395 データシートの表示（PDF） - Inchange Semiconductor
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D2395 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=50μA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=50μA ;IC=0
VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A
VBEsat Base-emitter saturation voltage
IC=2A ;IB=0.2A
ICBO
Collector cut-off current
VCB=40V; IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE
DC current gain
IC=0.5A ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=0.5A ; VCE=5V;f=30MHz
hFE Classifications
E
F
100-200 160-320
Product Specification
2SD2395
MIN TYP. MAX UNIT
50
V
60
V
5
V
1.0
V
1.5
V
1.0 μA
1.0 μA
100
320
35
pF
100
MHz
2
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