MPS-U55 データシートの表示（PDF） - New Jersey Semiconductor

部品番号

コンポーネント説明

メーカー

MPS-U55

PNP SILICON ANNULAR AMPLIFIER TRANSISTORS

New Jersey Semiconductor 

<StmL-Conductor £A\oauc£i, Unc.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

MPS-U55 (SILICON)

MPS-U56

TELEPHONE: (201)376-2922

(212)227-6005

FAX: (201) 376-8960

PNP SILICON ANNULAR

AMPLIFIER TRANSISTORS

. . . designed for general-purpose, high-voltage ampl fier and driver

applications.

• High Collector-Emitter Breakdown Voltage -

BVCEO = 60 Vdc <Min) @ lc = 1 .0 mAdc - MPS-U55

80 Vdc (Mini @ Ic = 1,0 mAdc - MPS-U56

• High Power Dissipation - Prj = 1 0 W @ TC = 25°C

• Complements to NPN MPS-U05 and MPS-U06

PNP SILICON

AMPLIFIER TRANSISTORS

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Total Device Dissipation @ TA - 25°C

Derate above 25°C

Total Device Dissipation 9 TC • 25°C

Derate above. 25°C

Operating and Storage Junction

Temperature Range

Symbol

VCEO

VCB

VEB

ic

PD

PD

Tj.Tstg

MPS-U55 MPS-U56

60

80

60

SO

4.0

2.0

1.0

8.0

10

80

-55 to 1 150

Unit

Vdc

Vdc

Vdc

Adc

Watt

mW/°C

Watts

mW/°C

°C

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Symbol

"JC

«JA

Max

12.5

125

Unit

°c/w

°c/w

0360

~ 0.375

— - 0.190

1 T rail

Collector Connected

Quality S<=imi-Conrh.)rtor$

Share Link: