BYG22AHE3(2007) データシートの表示（PDF） - Vishay Semiconductors
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BYG22AHE3 Datasheet PDF : 5 Pages
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BYG22A thru BYG22D
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL BYG22A
Maximum instantaneous
forward voltage (1)
IF = 1.0 A
IF = 2.0 A
TJ = 25 °C
VF
Maximum reverse current
VR = VRRM
TJ = 25 °C
TJ = 100 °C
IR
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
BYG22B
1.0
1.1
1
10
25
BYG22D
UNIT
V
µA
ns
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL BYG22A
Maximum thermal resistance - junction lead TL = const.
RθJL
Maximum thermal resistance - junction ambient
RθJA
Notes:
(1) Mounted on epoxy-glass hard tissue
(2) Mounted on epoxy-glass hard tissue, 50 mm2 35 µm Cu
(3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 µm Cu
BYG22B
25
150 (1)
125 (2)
100 (3)
BYG22D
UNIT
°C/W
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BYG22A-E3/TR
0.064
TR
BYG22A-E3/TR3
0.064
TR3
BYG22AHE3/TR (1)
0.064
TR
BYG22AHE3/TR3 (1)
0.064
TR3
Note:
(1) Automotive grade AEC Q101 qualified
BASE QUANTITY
1800
7500
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
10
1
TJ = 150 °C
TJ = 25 °C
0.1
0.01
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Forward Voltage (V)
Figure 1. Forward Current vs. Forward Voltage
2.5
2.0
RθJA ≤ 25 K/W
1.5
1.0
RθJA ≤ 125 K/W
0.5
RθJA ≤ 150 K/W
VR = VRRM
Half Sine-Wave
0
0 20 40 60 80 100 120 140 160
Ambient Temperature (°C)
Figure 2. Max. Average Forward Current vs. Ambient Temperature
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88959
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 27-Aug-07
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