BYG22A-M3 データシートの表示（PDF） - Vishay Semiconductors
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BYG22A-M3 Datasheet PDF : 5 Pages
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BYG22A, BYG22B, BYG22D
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10
1
TJ = 150 °C
TJ = 25 °C
0.1
0.01
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
50
VR = VRRM
40
30
PR - Limit
20
at 100 % VR
PR - Limit
10
at 80 % VR
0
25
50
75
100
125
150
Junction Temperature (°C)
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
2.5
2.0
RθJA ≤ 25 K/W
1.5
1.0
RθJA ≤ 125 K/W
0.5
RθJA ≤ 150 K/W
VR = VRRM
Half Sine-Wave
0
0 20 40 60 80 100 120 140 160
Ambient Temperature (°C)
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
70
f = 1 MHz
60
50
40
30
20
10
0
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
100
VR = VRRM
10
1
25
50
75
100
125
150
Junction Temperature (°C)
Fig. 3 - Reverse Current vs. Junction Temperature
140
TA = 125 °C
120
TA = 100 °C
100
TA = 75 °C
80
60
TA = 50 °C
40
TA = 25 °C
20
0
0
IR = 0.5 A, iR = 0.125 A
0.2
0.4
0.6
0.8
1.0
Forward Current (A)
Fig. 6 - Max. Reverse Recovery Time vs. Forward Current
Revision: 17-Aug-17
3
Document Number: 88959
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