BD034 データシートの表示（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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BD034

TO-126 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors

BD034 TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM:

1.25 W (Tamb=25℃)

Collector current

ICM:

-2.5 A

Collector-base voltage

V(BR)CBO:

-110 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

TO-126

1. EMITTER

2. COLLECTOR

3. BASE

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

hFE(2)

VCE(sat)

VBE

fT

Test conditions

Ic=-100µA, IE=0

Ic=-10mA, IB=0

IE=-100µA, IC=0

VCB=-100V, IE=0

VEB=-5V, IC=0

VCE=-2V, IC=-100mA

VCE=-2V, IC=-1.5A

IC=-2A, IB=-200mA

VCE=-5V, IC=-500mA

VCE=-1V, IC=-250mA, f=1MHz

MIN TYP MAX UNIT

-110

V

-80

V

-7

V

-1 µA

-1 µA

100

560

40

-0.5 V

-1

V

3

MHz

CLASSIFICATION OF hFE(1)

Rank

R

Range

100-200

S

140-280

T

200-400

U

280-560

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