BD034 データシートの表示（PDF） - TY Semiconductor

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BD034

TO-126 Plastic-Encapsulate Transistors

TY Semiconductor 

Product specification

TO-126 Plastic-Encapsulate Transistors

BD034 TRANSISTOR (PNP)

TO – 126

FEATURES

z High Transition Frequency

z High Collector Current

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

-110

-95

-7

-2.5

1.25

100

150

-55~+150

1. EMITTER

2. COLLECTOR

3. BASE

Unit

V

V

V

A

W

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Collector-base breakdown voltage

V(BR)CBO

IC=-100µA,IE=0

Collector-emitter breakdown voltage

V(BR)CEO

IC=-10mA,IB=0

Emitter-base breakdown voltage

V(BR)EBO

IE=-100µA,IC=0

Collector cut-off current

ICBO

VCB=-100V,IE=0

Emitter cut-off current

IEBO

VEB=-5V,IC=0

DC current gain

hFE(1)

hFE(2)

VCE=-2V, IC=-100mA

VCE=-2V, IC=-1.5A

Collector-emitter saturation voltage

VCE(sat)

IC=-2A,IB=-200mA

Base-emitter voltage

VBE

VCE=-5V, IC=-500mA

Transition frequency

fT

VCE=-1V,IC=-250mA, f=1MHz

Min Typ Max Unit

-110

V

-95

V

-7

V

-1 μA

-1

μA

100

560

40

-0.5 V

-1

V

3

MHz

CLASSIFICATION OF hFE(1)

RANK

R

RANGE

100-200

S

140-280

T

200-400

U

280-560

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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