MDF11N65B データシートの表示（PDF） - MagnaChip Semiconductor
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MDF11N65B Datasheet PDF : 6 Pages
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MDF11N65B
N-Channel MOSFET 650V, 12A, 0.65Ω
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 650V
ID = 12A
RDS(ON) ≤ 0.65Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
G
TO-220F
MDF Series
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Aug 2011 Version 1.1
1
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
Symbol
RθJA
RθJC
S
Rating
650
±30
12*
7.7*
48*
49.6
0.4
18.1
4.5
750
-55~150
Unit
V
V
A
A
A
W
W/oC
mJ
V/ns
mJ
oC
Rating
62.5
2.52
Unit
oC/W
MagnaChip Semiconductor Ltd.
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