MDF11N65BTH データシートの表示（PDF） - MagnaChip Semiconductor
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MDF11N65BTH Datasheet PDF : 6 Pages
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20
Vgs=4.5V
=5.0V
16
=5.5V
=6.0V
=6.5V
=7.0V
12
=8.0V
=10.0V
=15.0V
8
4
Notes
1. 250㎲ PulseTest
2. TC=25℃
0
0
5
10
15
VDS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
3.0
※ Notes :
2.5
1. VGS = 10 V
2. ID = 6A
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
0.80
0.75
0.70
VGS=10.0V
0.65
VGS=20V
0.60
0.55
0.50
2 4 6 8 10 12 14 16 18 20
ID,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.2
※ Notes :
1. VGS = 0 V
2. ID = 250㎂
1.1
1.0
0.9
0.8
-50
0
50
100
150
TJ, Junction Temperature [oC]
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. Vds=30V
10
150℃
25℃ -55℃
※ Notes :
1. VGS = 0 V
2.250µs Pulse test
10
150℃
25℃
1
4
5
6
7
8
VGS [V]
Fig.5 Transfer Characteristics
Aug 2011 Version 1.1
3
1
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.
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