MJD117 データシートの表示（PDF） - Fairchild Semiconductor

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MJD117

PNP Silicon Darlington Transistor

Fairchild Semiconductor 

Typical Characteristics

10000

VCE = - 3V

1000

100

10

-0.01

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

10

VCC= - 30V

IC=250IB

1

tR

0.1

-0.01

-0.1

-1

IC[A], COLLECTOR CURRENT

tD

-10

Figure 3. Collector Output Capacitance

1000

100

10

1

-0.01

-0.1

-1

-10

-100

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 5. Turn Off Time

©2001 Fairchild Semiconductor Corporation

-10

IC = 250 IB

VBE(sat)

-1

VCE(sat)

-0.1

-0.01

-0.01

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

10

VCC=30V

IC=250IB

tSTG

1

tF

0.1

-0.01

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 4. Turn On Time

-10

100µs

5ms1ms

-1

DC

-0.1

-0.01

-1

-10

-100

VCE[V], COLLECTOR-EMITTER VOLTAGE

-1000

Figure 6. Safe Operating Area

Rev. A2, June 2001

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